VS-2EGH02HM3 www.vishay.com vishay semiconductors revision: 20-jul-16 1 document number: 94859 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ultrafast rectifier, 2 a fred pt ? features ? ultrafast recovery time, reduced q rr and soft recovery ? 175 c maximum operating junction temperature ? specific for output and snubber operation ? low forward voltage drop ? low leakage current ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified, meets jesd 201 class 2 whisker test ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 description / applications state of the art ultrafast recovery rectifiers designed with optimized performance of forw ard voltage drop, ultrafast recovery time, and fast recovery. the planar structure and the plat inum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. these devices are intended fo r use in snubber, output operation, inverters or as freewheeling diodes. their extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switching element. note (1) mounted on pcb with 6 mm x 3.5 mm lands product summary package do-214aa (smb) i f(av) 2 a v r 200 v v f at i f 0.66 v t rr typ. 24 ns t j max. 175 c diode variation single die cathode anode do-214aa ( s mb) absolute maximum ratings parameter symbol test conditions values units peak repetitive reverse voltage v rrm 200 v average rectified forward current i f(av) t l = 150 c (1) 2 non-repetitive peak surge current i fsm t j = 25 c 70 a operating junction and storage temperatures t j , t stg -65 to +175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 200 - - v forward voltage v f i f = 2 a - 0.84 0.9 i f = 2 a, t j = 150 c - 0.66 0.7 reverse leakage current i r v r = v r rated - - 2 a t j = 150 c, v r = v r rated - - 20 junction capacitance c t v r = 200 v - 12 - pf critical rate if rise of reverse voltage dv/dt - - 10 000 v/s
VS-2EGH02HM3 www.vishay.com vishay semiconductors revision: 20-jul-16 2 document number: 94859 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) units mounted on pcb 6 mm x 3.5 mm land areas fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test co nditions min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 100 a/s, v r = 30 v - 24 - ns i f = 1.0 a, di f /dt = 50 a/s, v r = 30 v - 27 - i f = 0.5 a, i r = 1 a, i rr = 0.25 a - - 23 t j = 25 c i f = 2 a di f /dt = 200 a/s v r = 100 v -21- t j = 125 c - 26 - peak recovery current i rrm t j = 25 c - 2.7 - a t j = 125 c - 3.4 - reverse recovery charge q rr t j = 25 c - 28 - nc t j = 125 c - 43 - thermal - mechanical specifications parameter symbol test co nditions min. typ. max. units maximum junction and storage temperature range t j , t stg -65 - 175 c thermal resistance, junction to case r thjc (1) --17 c/w thermal resistance, junction to ambient r thja (1) --80 approximate weight 0.1 g 0.003 oz. marking device case style do-214aa (smb) 2h2 v fm - forward voltage drop (v) i f - instantaneous forward current (a) 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t j = 25 c t j = 150 c t j = 175 c 1 v r - reverse voltage (v) i r - reverse current (a) 0.0001 0.001 0.01 0.1 10 100 0 50 100 150 200 150 c 175 c 25 c 125 c
VS-2EGH02HM3 www.vishay.com vishay semiconductors revision: 20-jul-16 3 document number: 94859 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum allowable case temperature vs. average forward current fig. 5 - forward power loss characteristics fig. 6 - typical reverse recovery vs. di f /dt fig. 7 - typical stored charge vs. di f /dt c t - junction capacitance (pf) v r - reverse voltage (v) 1 100 10 0 50 100 150 200 allowable case temperature (c) i f(av) - average forward current (a) 0 0.5 1.0 1.5 2.0 2.5 3.0 120 130 140 150 160 170 180 dc average power loss (w) i f(av) - average forward current (a) 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 dc rm s limit t rr (ns) di f /dt (a/s) 100 1000 i f = 2 a, 125 c i f = 2 a, 25 c typical value 5 10 15 20 25 30 35 40 q rr (nc) di f /dt (a/s) 100 1000 10 15 20 25 30 35 40 45 50 55 60 typical value i f = 2 a, 125 c i f = 2 a, 25 c
VS-2EGH02HM3 www.vishay.com vishay semiconductors revision: 20-jul-16 4 document number: 94859 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 8 - reverse recovery waveform and definitions ordering information (example) preferred p/n package code minimum or der quantity packaging description VS-2EGH02HM3/5bt 5bt 3200 13"diameter plastic tape and reel VS-2EGH02HM3_a/i i 3200 13"diame ter plastic tape and reel links to related documents dimensions www.vishay.com/doc?95401 part marking information www.vishay.com/doc?95472 packaging information www.vishay.com/doc?95404 spice model www.vishay.com/doc?96021 q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
document number: 95401 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 09-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 smb outline dimensions vishay semiconductors dimensions in inches (millimeters) cathode band do-214aa ( s mb) 0.086 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (3.30) 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.096 (2.44) 0.084 (2.13) mounting pad layout 0.086 (2.18) min. 0.060 (1.52) min. 0.085 (2.159) max. 0.220 (5.59) ref.
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